TPC8018-H(TE12LQM) - MOSFET N-CH 30V 18A SOP8 2-6J1B

Produsentens varenummer

TPC8018-H(TE12LQM)

Intern delenummer

ABC-TPC8018-H(TE12LQM)

Produsent

Toshiba Semiconductor and Storage

Kort beskrivelse

MOSFET N-CH 30V 18A SOP8 2-6J1B

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

43707 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har TPC8018-H(TE12LQM) på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for TPC8018-H(TE12LQM)

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : TPC8018-H(TE12LQM)

Produsent : Toshiba Semiconductor and Storage

Beskrivelse : MOSFET N-CH 30V 18A SOP8 2-6J1B

Serie : -

Delstatus : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 30V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 18A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 4.6 mOhm @ 9A, 10V

Vgs (th) (Max) @ Id : 2.3V @ 1mA

Gate Lading (Qg) (Max) @ Vgs : 38nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 2265pF @ 10V

FET-funksjon : -

Effektdissipasjon (maks) : 1W (Ta)

Driftstemperatur : 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : 8-SOP (5.5x6.0)

Pakke / sak : 8-SOIC (0.173", 4.40mm Width)

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : TPC801 , TPC8018-H

dokumenter for TPC8018-H(TE12LQM)

Dataark : TPC8018-H(TE12LQM).pdf

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