IRFH7110TR2PBF - MOSFET N CH 100V 11A PQFN5X6

Produsentens varenummer

IRFH7110TR2PBF

Intern delenummer

ABC-IRFH7110TR2PBF

Produsent

Infineon Technologies

Kort beskrivelse

MOSFET N CH 100V 11A PQFN5X6

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

63648 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har IRFH7110TR2PBF på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for IRFH7110TR2PBF

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : IRFH7110TR2PBF

Produsent : Infineon Technologies

Beskrivelse : MOSFET N CH 100V 11A PQFN5X6

Serie : HEXFET®

Delstatus : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 100V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 11A (Ta), 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 13.5 mOhm @ 35A, 10V

Vgs (th) (Max) @ Id : 4V @ 100µA

Gate Lading (Qg) (Max) @ Vgs : 87nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 3240pF @ 25V

FET-funksjon : -

Effektdissipasjon (maks) : 3.6W (Ta), 104W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : 8-PQFN (5x6)

Pakke / sak : 8-TQFN Exposed Pad

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : IRFH , IRFH711

dokumenter for IRFH7110TR2PBF

Dataark : IRFH7110TR2PBF.pdf

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