SIZ998DT-T1-GE3 - MOSFET 2 N-CH 30V 8-POWERPAIR

Produsentens varenummer

SIZ998DT-T1-GE3

Intern delenummer

ABC-SIZ998DT-T1-GE3

Produsent

Vishay Siliconix

Kort beskrivelse

MOSFET 2 N-CH 30V 8-POWERPAIR

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

955269 Pieces

Reference Pris

~~USD 0.34265~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har SIZ998DT-T1-GE3 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for SIZ998DT-T1-GE3

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : SIZ998DT-T1-GE3

Produsent : Vishay Siliconix

Beskrivelse : MOSFET 2 N-CH 30V 8-POWERPAIR

Serie : TrenchFET®

Delstatus : Active

FET Type : 2 N-Channel (Dual), Schottky

FET-funksjon : Standard

Drenering til kildespenning (Vdss) : 30V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 20A (Tc), 60A (Tc)

Rds On (Max) @ Id, vgs : 6.7 mOhm @ 15A, 10V, 2.8 mOhm @ 19A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 8.1nC @ 4.5V, 19.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds : 930pF @ 15V, 2620pF @ 15V

Kraft - Maks : 20.2W, 32.9W

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / sak : 8-PowerWDFN

Leverandørenhetspakke : 8-PowerPair®

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : SIZ99 , SIZ998D

dokumenter for SIZ998DT-T1-GE3

Dataark : SIZ998DT-T1-GE3.pdf

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