TK8R2A06PL,S4X - X35 PB-F POWER MOSFET TRANSISTOR

Produsentens varenummer

TK8R2A06PL,S4X

Intern delenummer

ABC-TK8R2A06PL,S4X

Produsent

Toshiba Semiconductor and Storage

Kort beskrivelse

X35 PB-F POWER MOSFET TRANSISTOR

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

411719 Pieces

Reference Pris

~~USD 0.795~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har TK8R2A06PL,S4X på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for TK8R2A06PL,S4X

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : TK8R2A06PL,S4X

Produsent : Toshiba Semiconductor and Storage

Beskrivelse : X35 PB-F POWER MOSFET TRANSISTOR

Serie : U-MOSIX-H

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 60V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 11.4 mOhm @ 8A, 4.5V

Vgs (th) (Max) @ Id : 2.5V @ 300µA

Gate Lading (Qg) (Max) @ Vgs : 28.4nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 1990pF @ 25V

FET-funksjon : -

Effektdissipasjon (maks) : 36W (Tc)

Driftstemperatur : 175°C (TJ)

Monteringstype : Through Hole

Leverandørenhetspakke : TO-220SIS

Pakke / sak : TO-220-3 Full Pack

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : TK8R , TK8R2A0

dokumenter for TK8R2A06PL,S4X

Dataark : TK8R2A06PL,S4X.pdf

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