SIRA14BDP-T1-GE3 - MOSFET N-CHAN 30-V POWERPAK SO-8

Produsentens varenummer

SIRA14BDP-T1-GE3

Intern delenummer

ABC-SIRA14BDP-T1-GE3

Produsent

Vishay Siliconix

Kort beskrivelse

MOSFET N-CHAN 30-V POWERPAK SO-8

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

3244045 Pieces

Reference Pris

~~USD 0.1009~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har SIRA14BDP-T1-GE3 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for SIRA14BDP-T1-GE3

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : SIRA14BDP-T1-GE3

Produsent : Vishay Siliconix

Beskrivelse : MOSFET N-CHAN 30-V POWERPAK SO-8

Serie : TrenchFET® Gen IV

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 30V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 21A (Ta), 64A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 5.38 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 22nC @ 10V

Vgs (maks) : +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds : 917pF @ 15V

FET-funksjon : -

Effektdissipasjon (maks) : 3.7W (Ta), 36W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : PowerPAK® SO-8

Pakke / sak : PowerPAK® SO-8

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : SIRA1 , SIRA14BD

dokumenter for SIRA14BDP-T1-GE3

Dataark : SIRA14BDP-T1-GE3.pdf

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