TH58BYG2S3HBAI6 - IC FLASH 4G PARALLEL 67VFBGA

Produsentens varenummer

TH58BYG2S3HBAI6

Intern delenummer

ABC-TH58BYG2S3HBAI6

Produsent

Toshiba Memory America, Inc.

Kort beskrivelse

IC FLASH 4G PARALLEL 67VFBGA

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

135032 Pieces

Reference Pris

~~USD 3.08~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har TH58BYG2S3HBAI6 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for TH58BYG2S3HBAI6

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : TH58BYG2S3HBAI6

Produsent : Toshiba Memory America, Inc.

Beskrivelse : IC FLASH 4G PARALLEL 67VFBGA

Serie : Benand™

Delstatus : Active

Minnetype : Non-Volatile

Minneformat : FLASH

Teknologi : FLASH - NAND (SLC)

Minnestørrelse : 4Gb (512M x 8)

Klokkefrekvens : -

Skriv syklustid - Word, Page : 25ns

Tilgangstid : 25ns

Minne-grensesnitt : Parallel

Spenning - forsyning : 1.7V ~ 1.95V

Driftstemperatur : -40°C ~ 85°C (TA)

Monteringstype : Surface Mount

Pakke / sak : 67-VFBGA

Leverandørenhetspakke : 67-VFBGA (6.5x8)

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : TH58B , TH58BYG

dokumenter for TH58BYG2S3HBAI6

Dataark : TH58BYG2S3HBAI6.pdf

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