EPC2103ENG - GAN TRANS 2N-CH 80V BUMPED DIE

Produsentens varenummer

EPC2103ENG

Intern delenummer

ABC-EPC2103ENG

Produsent

EPC

Kort beskrivelse

GAN TRANS 2N-CH 80V BUMPED DIE

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

52897 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har EPC2103ENG på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for EPC2103ENG

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : EPC2103ENG

Produsent : EPC

Beskrivelse : GAN TRANS 2N-CH 80V BUMPED DIE

Serie : eGaN®

Delstatus : Active

FET Type : 2 N-Channel (Half Bridge)

FET-funksjon : GaNFET (Gallium Nitride)

Drenering til kildespenning (Vdss) : 80V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 23A

Rds On (Max) @ Id, vgs : 5.5 mOhm @ 20A, 5V

Vgs (th) (Max) @ Id : 2.5V @ 7mA

Gate Lading (Qg) (Max) @ Vgs : 6.5nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 40V

Kraft - Maks : -

Driftstemperatur : -40°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / sak : Die

Leverandørenhetspakke : Die

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : EPC , EPC21

dokumenter for EPC2103ENG

Dataark : EPC2103ENG.pdf

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