TK4A60DB(STA4,Q,M) - MOSFET N-CH 600V 3.7A TO-220SIS

Produsentens varenummer

TK4A60DB(STA4,Q,M)

Intern delenummer

ABC-TK4A60DB(STA4,Q,M)

Produsent

Toshiba Semiconductor and Storage

Kort beskrivelse

MOSFET N-CH 600V 3.7A TO-220SIS

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

51072 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har TK4A60DB(STA4,Q,M) på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for TK4A60DB(STA4,Q,M)

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : TK4A60DB(STA4,Q,M)

Produsent : Toshiba Semiconductor and Storage

Beskrivelse : MOSFET N-CH 600V 3.7A TO-220SIS

Serie : π-MOSVII

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 600V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 2 Ohm @ 1.9A, 10V

Vgs (th) (Max) @ Id : 4.4V @ 1mA

Gate Lading (Qg) (Max) @ Vgs : 11nC @ 10V

Vgs (maks) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 25V

FET-funksjon : -

Effektdissipasjon (maks) : 35W (Tc)

Driftstemperatur : 150°C (TJ)

Monteringstype : Through Hole

Leverandørenhetspakke : TO-220SIS

Pakke / sak : TO-220-3 Full Pack

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : TK4A60 , TK4A60DB(

dokumenter for TK4A60DB(STA4,Q,M)

Dataark : TK4A60DB(STA4,Q,M).pdf

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