A2G35S200-01SR3 - AIRFAST RF POWER GAN TRANSISTOR

Produsentens varenummer

A2G35S200-01SR3

Intern delenummer

ABC-A2G35S200-01SR3

Produsent

NXP USA Inc.

Kort beskrivelse

AIRFAST RF POWER GAN TRANSISTOR

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

38556 Pieces

Reference Pris

~~USD 61.71792~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har A2G35S200-01SR3 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for A2G35S200-01SR3

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : A2G35S200-01SR3

Produsent : NXP USA Inc.

Beskrivelse : AIRFAST RF POWER GAN TRANSISTOR

Serie : -

Delstatus : Active

Transistortype : LDMOS

Frekvens : 3.4GHz ~ 3.6GHz

Gevinst : 16.1dB

Spenning - Test : 48V

Nåværende vurdering : -

Støyfigur : -

Nåværende - Test : 291mA

Strøm - utgang : 180W

Spenning - vurdert : 125V

Pakke / sak : NI-400S-2S

Leverandørenhetspakke : NI-400S-2S

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : A2G35 , A2G35S2

dokumenter for A2G35S200-01SR3

Dataark : A2G35S200-01SR3.pdf

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