1N8026-GA - DIODE SILICON 1.2KV 8A TO257

Produsentens varenummer

1N8026-GA

Intern delenummer

ABC-1N8026-GA

Produsent

GeneSiC Semiconductor

Kort beskrivelse

DIODE SILICON 1.2KV 8A TO257

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

59368 Pieces

Reference Pris

~~USD 104.05~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har 1N8026-GA på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for 1N8026-GA

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : 1N8026-GA

Produsent : GeneSiC Semiconductor

Beskrivelse : DIODE SILICON 1.2KV 8A TO257

Serie : -

Delstatus : Obsolete

Diodetype : Silicon Carbide Schottky

Spenning - DC Reverse (Vr) (Max) : 1200V

Nåværende - Gjennomsnittlig rettet (Io) : 8A (DC)

Spenning - Fremover (Vf) (Maks) @ Hvis : 1.6V @ 2.5A

Hastighet : No Recovery Time > 500mA (Io)

Omvendt gjenopprettingstid (trr) : 0ns

Nåværende - Omvendt lekkasje @ Vr : 10µA @ 1200V

Capacitance @ Vr, F : 237pF @ 1V, 1MHz

Monteringstype : Through Hole

Pakke / sak : TO-257-3

Leverandørenhetspakke : TO-257

Driftstemperatur - veikryss : -55°C ~ 250°C

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : 1N8 , 1N80

dokumenter for 1N8026-GA

Dataark : 1N8026-GA.pdf

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