HGT1S10N120BNST - IGBT 1200V 35A 298W TO263AB

Produsentens varenummer

HGT1S10N120BNST

Intern delenummer

ABC-HGT1S10N120BNST

Produsent

ON Semiconductor

Kort beskrivelse

IGBT 1200V 35A 298W TO263AB

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

363083 Pieces

Reference Pris

~~USD 0.90148~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har HGT1S10N120BNST på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for HGT1S10N120BNST

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : HGT1S10N120BNST

Produsent : ON Semiconductor

Beskrivelse : IGBT 1200V 35A 298W TO263AB

Serie : -

Delstatus : Active

IGBT-type : NPT

Spenning - Samlebrenningens nedbrytning (maks) : 1200V

Nåværende - Samler (Ic) (Maks) : 35A

Nåværende - Collector Pulsed (Icm) : 80A

Vce (på) (Max) @ Vge, Ic : 2.7V @ 15V, 10A

Kraft - Maks : 298W

Bytte energi : 320µJ (on), 800µJ (off)

Inngangstype : Standard

Portladning : 100nC

Td (av / på) ved 25 ° C : 23ns/165ns

Testforhold : 960V, 10A, 10 Ohm, 15V

Omvendt gjenopprettingstid (trr) : -

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / sak : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Leverandørenhetspakke : TO-263AB

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : HGT1S , HGT1S10

dokumenter for HGT1S10N120BNST

Dataark : HGT1S10N120BNST.pdf

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