SIS990DN-T1-GE3 - MOSFET 2N-CH 100V 12.1A 1212-8

Produsentens varenummer

SIS990DN-T1-GE3

Intern delenummer

ABC-SIS990DN-T1-GE3

Produsent

Vishay Siliconix

Kort beskrivelse

MOSFET 2N-CH 100V 12.1A 1212-8

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

1500660 Pieces

Reference Pris

~~USD 0.21812~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har SIS990DN-T1-GE3 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for SIS990DN-T1-GE3

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : SIS990DN-T1-GE3

Produsent : Vishay Siliconix

Beskrivelse : MOSFET 2N-CH 100V 12.1A 1212-8

Serie : TrenchFET®

Delstatus : Active

FET Type : 2 N-Channel (Dual)

FET-funksjon : Standard

Drenering til kildespenning (Vdss) : 100V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 12.1A

Rds On (Max) @ Id, vgs : 85 mOhm @ 8A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 250pF @ 50V

Kraft - Maks : 25W

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / sak : PowerPAK® 1212-8 Dual

Leverandørenhetspakke : PowerPAK® 1212-8 Dual

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : SIS99 , SIS990D

dokumenter for SIS990DN-T1-GE3

Dataark : SIS990DN-T1-GE3.pdf

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