SQJ912AEP-T1_GE3 - MOSFET 2N-CH 40V 30A PPAK SO-8

Produsentens varenummer

SQJ912AEP-T1_GE3

Intern delenummer

ABC-SQJ912AEP-T1_GE3

Produsent

Vishay Siliconix

Kort beskrivelse

MOSFET 2N-CH 40V 30A PPAK SO-8

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

1069313 Pieces

Reference Pris

~~USD 0.306105~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har SQJ912AEP-T1_GE3 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for SQJ912AEP-T1_GE3

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : SQJ912AEP-T1_GE3

Produsent : Vishay Siliconix

Beskrivelse : MOSFET 2N-CH 40V 30A PPAK SO-8

Serie : Automotive, AEC-Q101, TrenchFET®

Delstatus : Active

FET Type : 2 N-Channel (Dual)

FET-funksjon : Standard

Drenering til kildespenning (Vdss) : 40V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 30A

Rds On (Max) @ Id, vgs : 9.3 mOhm @ 9.7A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 38nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 1835pF @ 20V

Kraft - Maks : 48W

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Surface Mount

Pakke / sak : PowerPAK® SO-8 Dual

Leverandørenhetspakke : PowerPAK® SO-8 Dual

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : SQJ91 , SQJ912AE

dokumenter for SQJ912AEP-T1_GE3

Dataark : SQJ912AEP-T1_GE3.pdf

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