TK10A60D(STA4,Q,M) - MOSFET N-CH 600V 10A TO220SIS

Produsentens varenummer

TK10A60D(STA4,Q,M)

Intern delenummer

ABC-TK10A60D(STA4,Q,M)

Produsent

Toshiba Semiconductor and Storage

Kort beskrivelse

MOSFET N-CH 600V 10A TO220SIS

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

663264 Pieces

Reference Pris

~~USD 0.4935~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har TK10A60D(STA4,Q,M) på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for TK10A60D(STA4,Q,M)

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : TK10A60D(STA4,Q,M)

Produsent : Toshiba Semiconductor and Storage

Beskrivelse : MOSFET N-CH 600V 10A TO220SIS

Serie : π-MOSVII

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 600V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 10A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 750 mOhm @ 5A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Gate Lading (Qg) (Max) @ Vgs : 25nC @ 10V

Vgs (maks) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 25V

FET-funksjon : -

Effektdissipasjon (maks) : 45W (Tc)

Driftstemperatur : 150°C (TJ)

Monteringstype : Through Hole

Leverandørenhetspakke : TO-220SIS

Pakke / sak : TO-220-3 Full Pack

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : TK10A6 , TK10A60D(

dokumenter for TK10A60D(STA4,Q,M)

Dataark : TK10A60D(STA4,Q,M).pdf

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