SQJ262EP-T1_GE3 - MOSFET 2 N-CH 60V POWERPAK SO8

Produsentens varenummer

SQJ262EP-T1_GE3

Intern delenummer

ABC-SQJ262EP-T1_GE3

Produsent

Vishay Siliconix

Kort beskrivelse

MOSFET 2 N-CH 60V POWERPAK SO8

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

1108814 Pieces

Reference Pris

~~USD 0.2952~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har SQJ262EP-T1_GE3 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for SQJ262EP-T1_GE3

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : SQJ262EP-T1_GE3

Produsent : Vishay Siliconix

Beskrivelse : MOSFET 2 N-CH 60V POWERPAK SO8

Serie : Automotive, AEC-Q101, TrenchFET®

Delstatus : Active

FET Type : 2 N-Channel (Dual)

FET-funksjon : Standard

Drenering til kildespenning (Vdss) : 60V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 15A (Tc), 40A (Tc)

Rds On (Max) @ Id, vgs : 35.5 mOhm @ 2A, 10V, 15.5 mOhm @ 5A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 10nC @ 10V, 23nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 550pF @ 25V, 1260pF @ 25V

Kraft - Maks : 27W (Tc), 48W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Surface Mount

Pakke / sak : PowerPAK® SO-8 Dual

Leverandørenhetspakke : PowerPAK® SO-8 Dual Asymmetric

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : SQJ26 , SQJ262E

dokumenter for SQJ262EP-T1_GE3

Dataark : SQJ262EP-T1_GE3.pdf

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