IDB09E60ATMA1 - DIODE GEN PURP 600V 19.3A TO263

Produsentens varenummer

IDB09E60ATMA1

Intern delenummer

ABC-IDB09E60ATMA1

Produsent

Infineon Technologies

Kort beskrivelse

DIODE GEN PURP 600V 19.3A TO263

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

66272 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har IDB09E60ATMA1 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for IDB09E60ATMA1

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : IDB09E60ATMA1

Produsent : Infineon Technologies

Beskrivelse : DIODE GEN PURP 600V 19.3A TO263

Serie : -

Delstatus : Obsolete

Diodetype : Standard

Spenning - DC Reverse (Vr) (Max) : 600V

Nåværende - Gjennomsnittlig rettet (Io) : 19.3A (DC)

Spenning - Fremover (Vf) (Maks) @ Hvis : 2V @ 9A

Hastighet : Fast Recovery =< 500ns, > 200mA (Io)

Omvendt gjenopprettingstid (trr) : 75ns

Nåværende - Omvendt lekkasje @ Vr : 50µA @ 600V

Capacitance @ Vr, F : -

Monteringstype : Surface Mount

Pakke / sak : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Leverandørenhetspakke : PG-TO263-3

Driftstemperatur - veikryss : -55°C ~ 175°C

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : IDB0 , IDB09E

dokumenter for IDB09E60ATMA1

Dataark : IDB09E60ATMA1.pdf

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