2N5416UA/TR - POWER BJT

Produsentens varenummer

2N5416UA/TR

Intern delenummer

ABC-2N5416UA/TR

Produsent

Microsemi Corporation

Kort beskrivelse

POWER BJT

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

89406 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har 2N5416UA/TR på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for 2N5416UA/TR

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : 2N5416UA/TR

Produsent : Microsemi Corporation

Beskrivelse : POWER BJT

Serie : -

Delstatus : Active

Transistortype : PNP

Nåværende - Samler (Ic) (Maks) : 1A

Spenning - Samlebrenningens nedbrytning (maks) : 300V

Vce Saturation (Max) @ Ib, Ic : 2V @ 5mA, 50mA

Nåværende - Collector Cutoff (Max) : 50µA

DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 50mA, 10V

Kraft - Maks : -

Frekvens - overgang : -

Driftstemperatur : -65°C ~ 200°C (TJ)

Monteringstype : Surface Mount

Pakke / sak : 4-SMD, No Lead

Leverandørenhetspakke : UA

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : 2N5 , 2N541

dokumenter for 2N5416UA/TR

Dataark : 2N5416UA/TR.pdf

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