TPH6R30ANL,L1Q - X35 PB-F POWER MOSFET TRANSISTOR

Produsentens varenummer

TPH6R30ANL,L1Q

Intern delenummer

ABC-TPH6R30ANL,L1Q

Produsent

Toshiba Semiconductor and Storage

Kort beskrivelse

X35 PB-F POWER MOSFET TRANSISTOR

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

1543248 Pieces

Reference Pris

~~USD 0.2121~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har TPH6R30ANL,L1Q på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for TPH6R30ANL,L1Q

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : TPH6R30ANL,L1Q

Produsent : Toshiba Semiconductor and Storage

Beskrivelse : X35 PB-F POWER MOSFET TRANSISTOR

Serie : U-MOSVIII-H

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 100V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 66A (Ta), 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 6.3 mOhm @ 22.5A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 500µA

Gate Lading (Qg) (Max) @ Vgs : 55nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 4300pF @ 50V

FET-funksjon : -

Effektdissipasjon (maks) : 2.5W (Ta), 54W (Tc)

Driftstemperatur : 150°C

Monteringstype : Surface Mount

Leverandørenhetspakke : 8-SOP Advance (5x5)

Pakke / sak : 8-PowerVDFN

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : TPH6 , TPH6R30

dokumenter for TPH6R30ANL,L1Q

Dataark : TPH6R30ANL,L1Q.pdf

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