RQ3E100BNTB - MOSFET N-CH 30V 10A HSMT8

Produsentens varenummer

RQ3E100BNTB

Intern delenummer

ABC-RQ3E100BNTB

Produsent

Rohm Semiconductor

Kort beskrivelse

MOSFET N-CH 30V 10A HSMT8

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

6103951 Pieces

Reference Pris

~~USD 0.053625~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har RQ3E100BNTB på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for RQ3E100BNTB

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : RQ3E100BNTB

Produsent : Rohm Semiconductor

Beskrivelse : MOSFET N-CH 30V 10A HSMT8

Serie : -

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 30V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 10A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 10.4 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Gate Lading (Qg) (Max) @ Vgs : 22nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 1100pF @ 15V

FET-funksjon : -

Effektdissipasjon (maks) : 2W (Ta)

Driftstemperatur : 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : 8-HSMT (3.2x3)

Pakke / sak : 8-PowerVDFN

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : RQ3 , RQ3E1

dokumenter for RQ3E100BNTB

Dataark : RQ3E100BNTB.pdf

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