VS-GB100TH120N - IGBT 1200V 200A 833W INT-A-PAK

Produsentens varenummer

VS-GB100TH120N

Intern delenummer

ABC-VS-GB100TH120N

Produsent

Vishay Semiconductor Diodes Division

Kort beskrivelse

IGBT 1200V 200A 833W INT-A-PAK

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

59181 Pieces

Reference Pris

~~USD 178.680835~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har VS-GB100TH120N på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for VS-GB100TH120N

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : VS-GB100TH120N

Produsent : Vishay Semiconductor Diodes Division

Beskrivelse : IGBT 1200V 200A 833W INT-A-PAK

Serie : -

Delstatus : Active

IGBT-type : -

konfigurasjon : Half Bridge

Spenning - Samlebrenningens nedbrytning (maks) : 1200V

Nåværende - Samler (Ic) (Maks) : 200A

Kraft - Maks : 833W

Vce (på) (Max) @ Vge, Ic : 2.35V @ 15V, 100A

Nåværende - Collector Cutoff (Max) : 5mA

Input Capacitance (Cies) @ Vce : 8.58nF @ 25V

Input : Standard

NTC Thermistor : No

Driftstemperatur : 150°C (TJ)

Monteringstype : Chassis Mount

Pakke / sak : Double INT-A-PAK (3 + 4)

Leverandørenhetspakke : Double INT-A-PAK

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : VS-G , VS-GB10

dokumenter for VS-GB100TH120N

Dataark : VS-GB100TH120N.pdf

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