RN1968FE(TE85L,F) - TRANS 2NPN PREBIAS 0.1W ES6

Produsentens varenummer

RN1968FE(TE85L,F)

Intern delenummer

ABC-RN1968FE(TE85L,F)

Produsent

Toshiba Semiconductor and Storage

Kort beskrivelse

TRANS 2NPN PREBIAS 0.1W ES6

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

58032 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har RN1968FE(TE85L,F) på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for RN1968FE(TE85L,F)

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : RN1968FE(TE85L,F)

Produsent : Toshiba Semiconductor and Storage

Beskrivelse : TRANS 2NPN PREBIAS 0.1W ES6

Serie : -

Delstatus : Obsolete

Transistortype : 2 NPN - Pre-Biased (Dual)

Nåværende - Samler (Ic) (Maks) : 100mA

Spenning - Samlebrenningens nedbrytning (maks) : 50V

Motstand - base (R1) : 22 kOhms

Motstand - Emitter Base (R2) : 47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA

Nåværende - Collector Cutoff (Max) : 100nA (ICBO)

Frekvens - overgang : 250MHz

Kraft - Maks : 100mW

Monteringstype : Surface Mount

Pakke / sak : SOT-563, SOT-666

Leverandørenhetspakke : ES6

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : RN196 , RN1968FE

dokumenter for RN1968FE(TE85L,F)

Dataark : RN1968FE(TE85L,F).pdf

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