IGT60R190D1SATMA1 - IC GAN FET 600V 23A 8HSOF

Produsentens varenummer

IGT60R190D1SATMA1

Intern delenummer

ABC-IGT60R190D1SATMA1

Produsent

Infineon Technologies

Kort beskrivelse

IC GAN FET 600V 23A 8HSOF

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

85272 Pieces

Reference Pris

~~USD 4.386205~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har IGT60R190D1SATMA1 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for IGT60R190D1SATMA1

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : IGT60R190D1SATMA1

Produsent : Infineon Technologies

Beskrivelse : IC GAN FET 600V 23A 8HSOF

Serie : CoolGaN™

Delstatus : Active

FET Type : N-Channel

Teknologi : GaNFET (Gallium Nitride)

Drenering til kildespenning (Vdss) : 600V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 12.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : -

Rds On (Max) @ Id, vgs : -

Vgs (th) (Max) @ Id : 1.6V @ 960µA

Gate Lading (Qg) (Max) @ Vgs : -

Vgs (maks) : -10V

Input Capacitance (Ciss) (Max) @ Vds : 157pF @ 400V

FET-funksjon : -

Effektdissipasjon (maks) : 55.5W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : PG-HSOF-8-3

Pakke / sak : 8-PowerSFN

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : IGT60 , IGT60R19

dokumenter for IGT60R190D1SATMA1

Dataark : IGT60R190D1SATMA1.pdf

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