GT10J312(Q) - IGBT 600V 10A 60W TO220SM

Produsentens varenummer
Intern delenummer
Kort beskrivelse
IGBT 600V 10A 60W TO220SM
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
84915 Pieces
Reference Pris
USD 0
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

ABC Semiconductor har GT10J312(Q) på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for GT10J312(Q)

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : GT10J312(Q)
Produsent : Toshiba Semiconductor and Storage
Beskrivelse : IGBT 600V 10A 60W TO220SM
Serie : -
Delstatus : Obsolete
IGBT-type : -
Spenning - Samlebrenningens nedbrytning (maks) : 600V
Nåværende - Samler (Ic) (Maks) : 10A
Nåværende - Collector Pulsed (Icm) : 20A
Vce (på) (Max) @ Vge, Ic : 2.7V @ 15V, 10A
Kraft - Maks : 60W
Bytte energi : -
Inngangstype : Standard
Portladning : -
Td (av / på) ved 25 ° C : 400ns/400ns
Testforhold : 300V, 10A, 100 Ohm, 15V
Omvendt gjenopprettingstid (trr) : 200ns
Driftstemperatur : 150°C (TJ)
Monteringstype : Surface Mount
Pakke / sak : TO-252-3, DPak (2 Leads + Tab), SC-63
Leverandørenhetspakke : TO-220SM
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : GT1 , GT10J

dokumenter for GT10J312(Q)

Dataark : GT10J312(Q).pdf

Relaterte produkter GT10J312(Q) Toshiba Semiconductor and Storage

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