GA10SICP12-263 - TRANS SJT 1200V 25A TO263-7

Produsentens varenummer

GA10SICP12-263

Intern delenummer

ABC-GA10SICP12-263

Produsent

GeneSiC Semiconductor

Kort beskrivelse

TRANS SJT 1200V 25A TO263-7

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

43537 Pieces

Reference Pris

~~USD 13.9587~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har GA10SICP12-263 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for GA10SICP12-263

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : GA10SICP12-263

Produsent : GeneSiC Semiconductor

Beskrivelse : TRANS SJT 1200V 25A TO263-7

Serie : -

Delstatus : Active

FET Type : -

Teknologi : SiC (Silicon Carbide Junction Transistor)

Drenering til kildespenning (Vdss) : 1200V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : -

Rds On (Max) @ Id, vgs : 100 mOhm @ 10A

Vgs (th) (Max) @ Id : -

Gate Lading (Qg) (Max) @ Vgs : -

Vgs (maks) : -

Input Capacitance (Ciss) (Max) @ Vds : 1403pF @ 800V

FET-funksjon : -

Effektdissipasjon (maks) : 170W (Tc)

Driftstemperatur : 175°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : D2PAK (7-Lead)

Pakke / sak : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : GA10 , GA10SIC

dokumenter for GA10SICP12-263

Dataark : GA10SICP12-263.pdf

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