SIB419DK-T1-GE3 - MOSFET P-CH 12V 9A SC75-6

Produsentens varenummer

SIB419DK-T1-GE3

Intern delenummer

ABC-SIB419DK-T1-GE3

Produsent

Vishay Siliconix

Kort beskrivelse

MOSFET P-CH 12V 9A SC75-6

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

42993 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har SIB419DK-T1-GE3 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for SIB419DK-T1-GE3

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : SIB419DK-T1-GE3

Produsent : Vishay Siliconix

Beskrivelse : MOSFET P-CH 12V 9A SC75-6

Serie : TrenchFET®

Delstatus : Obsolete

FET Type : P-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 12V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, vgs : 60 mOhm @ 5.2A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 11.82nC @ 5V

Vgs (maks) : ±8V

Input Capacitance (Ciss) (Max) @ Vds : 562pF @ 6V

FET-funksjon : -

Effektdissipasjon (maks) : 2.45W (Ta), 13.1W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : PowerPAK® SC-75-6L Single

Pakke / sak : PowerPAK® SC-75-6L

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : SIB41 , SIB419D

dokumenter for SIB419DK-T1-GE3

Dataark : SIB419DK-T1-GE3.pdf

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