EPC2016C - GANFET TRANS 100V 18A BUMPED DIE

Produsentens varenummer

EPC2016C

Intern delenummer

ABC-EPC2016C

Produsent

EPC

Kort beskrivelse

GANFET TRANS 100V 18A BUMPED DIE

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

623462 Pieces

Reference Pris

~~USD 0.525~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har EPC2016C på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for EPC2016C

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : EPC2016C

Produsent : EPC

Beskrivelse : GANFET TRANS 100V 18A BUMPED DIE

Serie : eGaN®

Delstatus : Active

FET Type : N-Channel

Teknologi : GaNFET (Gallium Nitride)

Drenering til kildespenning (Vdss) : 100V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 18A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 5V

Rds On (Max) @ Id, vgs : 16 mOhm @ 11A, 5V

Vgs (th) (Max) @ Id : 2.5V @ 3mA

Gate Lading (Qg) (Max) @ Vgs : 4.5nC @ 5V

Vgs (maks) : +6V, -4V

Input Capacitance (Ciss) (Max) @ Vds : 420pF @ 50V

FET-funksjon : -

Effektdissipasjon (maks) : -

Driftstemperatur : -40°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : Die

Pakke / sak : Die

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : EP , EPC2

dokumenter for EPC2016C

Dataark : EPC2016C.pdf

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