DMN1032UCB4-7 - MOSFET N-CH 12V 4.8A U-WLB1010-4

Produsentens varenummer

DMN1032UCB4-7

Intern delenummer

ABC-DMN1032UCB4-7

Produsent

Diodes Incorporated

Kort beskrivelse

MOSFET N-CH 12V 4.8A U-WLB1010-4

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

2603391 Pieces

Reference Pris

~~USD 0.12573~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har DMN1032UCB4-7 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for DMN1032UCB4-7

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : DMN1032UCB4-7

Produsent : Diodes Incorporated

Beskrivelse : MOSFET N-CH 12V 4.8A U-WLB1010-4

Serie : -

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 12V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 4.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, vgs : 26 mOhm @ 1A, 4.5V

Vgs (th) (Max) @ Id : 1.2V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 4.5nC @ 4.5V

Vgs (maks) : ±8V

Input Capacitance (Ciss) (Max) @ Vds : 450pF @ 6V

FET-funksjon : -

Effektdissipasjon (maks) : 900mW (Ta)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : U-WLB1010-4

Pakke / sak : 4-UFBGA, WLBGA

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : DMN1 , DMN103

dokumenter for DMN1032UCB4-7

Dataark : DMN1032UCB4-7.pdf

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