RN2712JE(TE85L,F) - TRANS 2PNP PREBIAS 0.1W ESV

Produsentens varenummer

RN2712JE(TE85L,F)

Intern delenummer

ABC-RN2712JE(TE85L,F)

Produsent

Toshiba Semiconductor and Storage

Kort beskrivelse

TRANS 2PNP PREBIAS 0.1W ESV

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

7422324 Pieces

Reference Pris

~~USD 0.0441~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har RN2712JE(TE85L,F) på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for RN2712JE(TE85L,F)

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : RN2712JE(TE85L,F)

Produsent : Toshiba Semiconductor and Storage

Beskrivelse : TRANS 2PNP PREBIAS 0.1W ESV

Serie : -

Delstatus : Active

Transistortype : 2 PNP - Pre-Biased (Dual) (Emitter Coupled)

Nåværende - Samler (Ic) (Maks) : 100mA

Spenning - Samlebrenningens nedbrytning (maks) : 50V

Motstand - base (R1) : 22 kOhms

Motstand - Emitter Base (R2) : -

DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA

Nåværende - Collector Cutoff (Max) : 100nA (ICBO)

Frekvens - overgang : 200MHz

Kraft - Maks : 100mW

Monteringstype : Surface Mount

Pakke / sak : SOT-553

Leverandørenhetspakke : ESV

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : RN271 , RN2712JE

dokumenter for RN2712JE(TE85L,F)

Dataark : RN2712JE(TE85L,F).pdf

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