SI8900EDB-T2-E1 - MOSFET 2N-CH 20V 5.4A 10-MFP

Produsentens varenummer

SI8900EDB-T2-E1

Intern delenummer

ABC-SI8900EDB-T2-E1

Produsent

Vishay Siliconix

Kort beskrivelse

MOSFET 2N-CH 20V 5.4A 10-MFP

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

380758 Pieces

Reference Pris

~~USD 0.85965~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

ABC Semiconductor har SI8900EDB-T2-E1 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for SI8900EDB-T2-E1

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : SI8900EDB-T2-E1

Produsent : Vishay Siliconix

Beskrivelse : MOSFET 2N-CH 20V 5.4A 10-MFP

Serie : TrenchFET®

Delstatus : Active

FET Type : 2 N-Channel (Dual) Common Drain

FET-funksjon : Logic Level Gate

Drenering til kildespenning (Vdss) : 20V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 5.4A

Rds On (Max) @ Id, vgs : -

Vgs (th) (Max) @ Id : 1V @ 1.1mA

Gate Lading (Qg) (Max) @ Vgs : -

Input Capacitance (Ciss) (Max) @ Vds : -

Kraft - Maks : 1W

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / sak : 10-UFBGA, CSPBGA

Leverandørenhetspakke : 10-Micro Foot™ CSP (2x5)

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : SI890 , SI8900E

dokumenter for SI8900EDB-T2-E1

Dataark : SI8900EDB-T2-E1.pdf

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